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Datasheet IPB017N06N3G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IPB017N06N3G | OptiMOS3 Power Transistor Type
IPB017N06N3 G
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested � |  Infineon Technologies | transistor |
IPB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IPB009N03LG | MOSFET, Transistor IPB009N03LG
MOSFET
OptiMOSª3Power-Transistor,30V
Features
•MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100%Avalanchetested •Pb-freeplating;RoHScomp Infineon Technologies mosfet | | |
| 2 | IPB010N06N | MOSFET, Transistor IPB010N06N
MOSFET
OptiMOSTMPower-Transistor,60V
Features
•Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Hal  Infineon mosfet | | |
| 3 | IPB011N04LG | OptiMOS3 Power Transistor Jf^S
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| 4 | IPB011N04NG | OptiMOS3 Power Transistor Ie]R
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6LHZ[XLY Q& ( , - 7 @B ( + :? 8 2 ? 5 . ? :? D 6B B EAD :3 = 6 ) @G6B , EAA= I Q * E2 = :7 :65 2 44@B 5:? 8 D @ $ Q' 492 ? ? 6= Q' @B >2 = = 6F 6= Q. = D B 2 = @G @? B 6C :C D 2 ? 46 ' 9H"\[# Q F 2= 2 ? 496 B 2D 65 Q ) 3 7 Infineon Technologies transistor | | |
| 5 | IPB014N06N | Power Transistor Type
OptiMOSTM Power-Transistor
Features • Optimized for synchronous rectification • 100% avalanche tested
• Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according t Infineon Technologies transistor | | |
| 6 | IPB015N04LG | OptiMOS3 Power Transistor Jg_T
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6MI[\YMZ S 4E FE I< F 6;< A: ' ) - . 9 BD- ' * S) C F < @< L 87 F 86;AB?B: K 9 BD 6BAH 8D F 8D E S+ G 4?< 9 < 87 466BD 7< A: F B$ S( 6;4AA8? ?B: < 6 ?8H 8? S J68??8AF: 4F 8 6;4D : 8 J ' 9I"^]# C D B7G 6F ) ' S/ 8D K Infineon Technologies transistor | | |
| 7 | IPB015N04NG | OptiMOS3 Power Transistor Type
IPP015N04N G IPB015N04N G
OptiMOS™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low Infineon Technologies transistor | |
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