IPA65R1K0CE データシート PDFこの部品の機能は「Mosfet ( Transistor )」です。 |
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部品番号 |
IPA65R1K0CE MOSFET ( Transistor ) IPA65R1K0CE MOSFET 650VCoolMOS™CEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredby Infineon |
文字列「 IPA65R1K0 」「 65R1K0CE 」で始まる検索結果です。 |
部品説明 |
1N6510 Isolated Diode Array SCOTTSDALE DIVISION 1N6510 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options WWW.Microsemi .COM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pac Microsemi |
1N6510 Isolated Diode Array SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4207, REV. - Isolated Diode Array Applications: High Frequency Data Lines RS-323 & RS-432 Networks LAN, Ethernet, I/O Ports IEC61000-4 compatible for ESD / EFT / Surge Features: Protects up to 8 I/O Ports SENSITRON SEMICONDUCTOR |
1N6510 Diode ( Rectifier ) American Microsemiconductor |
2N6510 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 2N6510 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29 Seme LAB |
2N6510 Silicon Power Transistor SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6510 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For use in switching power supply applications and other inductive SavantIC |
2N6510 Trans GP BJT NPN 200V 7A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor |
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