IP00C781 データシート PDFこの部品の機能は「H And V Keystone Correction DevICe」です。 |
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部品番号 |
IP00C781 H And V Keystone Correction Device General Description The IP00C781 device performs simultaneous horizontal and vertical corrections to compensate for the off-axis distortions introduced by the viewing angle in image projection systems I-Chips |
文字列「 IP00C781 」「 00C781 」で始まる検索結果です。 |
部品説明 |
MABA-007819-CF48A0 4:1 RF Flux Coupled Transformer RoHS Compliant 4:1 RF Flux Coupled Transformer 5-200MHz Schematic MABA-007819-CF48A0 V1P Features • • • • • • Surface Mount 4:1 Impedance 260°C Reflow Compatible RoHS* Compliant RoHS version of MABACT0018 Available on Tape and Reel. Reel quanti Tyco Electronics |
MASW-007813 GaAs SP4T High Power Switch RoHS Compliant MASW-007813 V2 Functional Schematic A N T 100 pF GaAs SP4T High Power Switch DC - 3 GHz Features • • • • • • • • • Low Voltage Operation: 2.5 V Low Harmonics: < -66 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.7 dB at 1 GHz H Tyco Electronics |
MASW-007813 GaAs SP4T High Power Switch RoHS Compliant MASW-007813 V2 Functional Schematic A N T 100 pF GaAs SP4T High Power Switch DC - 3 GHz Features • • • • • • • • • Low Voltage Operation: 2.5 V Low Harmonics: < -66 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.7 dB at 1 GHz H Tyco Electronics |
MASW-007813 GaAs SP4T High Power Switch MASW-007813 GaAs SP4T High Power Switch DC - 3 GHz Features Low Voltage Operation: 2.5 V Low Harmonics: < -66 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.7 dB at 1 GHz High Isolation: 25 dB at 2 GHz 0.5 micron GaAs pHEMT Process Low Profile, Lead-Free 3 MA-COM |
MASW-007813-001SMB GaAs SP4T High Power Switch MASW-007813 GaAs SP4T High Power Switch DC - 3 GHz Features Low Voltage Operation: 2.5 V Low Harmonics: < -66 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.7 dB at 1 GHz High Isolation: 25 dB at 2 GHz 0.5 micron GaAs pHEMT Process Low Profile, Lead-Free 3 MA-COM |
MASW-007813-TR3000 GaAs SP4T High Power Switch MASW-007813 GaAs SP4T High Power Switch DC - 3 GHz Features Low Voltage Operation: 2.5 V Low Harmonics: < -66 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.7 dB at 1 GHz High Isolation: 25 dB at 2 GHz 0.5 micron GaAs pHEMT Process Low Profile, Lead-Free 3 MA-COM |
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