INA2141PA データシート PDFこの部品の機能は「Dual/ Low Power/ G = 10/ 100 Instrumentation Amplifier」です。 |
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部品番号 |
INA2141PA Dual/ Low Power/ G = 10/ 100 INSTRUMENTATION AMPLIFIER ® INA 214 1 INA2141 INA 214 1 Dual, Low Power, G = 10, 100 INSTRUMENTATION AMPLIFIER FEATURES q LOW OFFSET VOLTAGE: 50µV max q LOW DRIFT: 0.5µV/°C max q EXCELLENT GAIN ACCURACY: ±0.05% ma Burr-Brown Corporation |
文字列「 INA2141 」「 2141PA 」で始まる検索結果です。 |
部品説明 |
INA2141 Dual/ Low Power/ G = 10/ 100 INSTRUMENTATION AMPLIFIER ® INA 214 1 INA2141 INA 214 1 Dual, Low Power, G = 10, 100 INSTRUMENTATION AMPLIFIER FEATURES q LOW OFFSET VOLTAGE: 50µV max q LOW DRIFT: 0.5µV/°C max q EXCELLENT GAIN ACCURACY: ±0.05% max at G = 10 q LOW INPUT BIAS CURRENT: 5nA max q HIGH CMR: 117dB min (G = 100) q Burr-Brown Corporation |
INA2141 Dual Low Power G = 10 100 Instrumentation Amplifier Texas Instruments |
INA2141P Dual/ Low Power/ G = 10/ 100 INSTRUMENTATION AMPLIFIER ® INA 214 1 INA2141 INA 214 1 Dual, Low Power, G = 10, 100 INSTRUMENTATION AMPLIFIER FEATURES q LOW OFFSET VOLTAGE: 50µV max q LOW DRIFT: 0.5µV/°C max q EXCELLENT GAIN ACCURACY: ±0.05% max at G = 10 q LOW INPUT BIAS CURRENT: 5nA max q HIGH CMR: 117dB min (G = 100) q Burr-Brown Corporation |
INA2141U Dual/ Low Power/ G = 10/ 100 INSTRUMENTATION AMPLIFIER ® INA 214 1 INA2141 INA 214 1 Dual, Low Power, G = 10, 100 INSTRUMENTATION AMPLIFIER FEATURES q LOW OFFSET VOLTAGE: 50µV max q LOW DRIFT: 0.5µV/°C max q EXCELLENT GAIN ACCURACY: ±0.05% max at G = 10 q LOW INPUT BIAS CURRENT: 5nA max q HIGH CMR: 117dB min (G = 100) q Burr-Brown Corporation |
INA2141UA Dual/ Low Power/ G = 10/ 100 INSTRUMENTATION AMPLIFIER ® INA 214 1 INA2141 INA 214 1 Dual, Low Power, G = 10, 100 INSTRUMENTATION AMPLIFIER FEATURES q LOW OFFSET VOLTAGE: 50µV max q LOW DRIFT: 0.5µV/°C max q EXCELLENT GAIN ACCURACY: ±0.05% max at G = 10 q LOW INPUT BIAS CURRENT: 5nA max q HIGH CMR: 117dB min (G = 100) q Burr-Brown Corporation |
2SD2141 Silicon NPN Triple Diffused Planar Transistor(Ignitor/ Driver for Solenoid and Motor/ and General Purpose) Equivalent circuit C Built-in Avalanche Diode for Surge Absorbing Darlington 2SD2141 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SD2141 10max 20ma Sanken electric |
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