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Datasheet IGC168T170S8RM Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IGC168T170S8RMIGBT3 Power Chip

IGC168T170S8RM IGBT3 Power Chip Features:  1700V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC Die Size IGC168T170S8RM 17
Infineon
Infineon		igbt


IGC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IGC07T120T6LIGBT4 Low Power Chip

IGC07T120T6L IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type IGC07T120T6L
Infineon
Infineon		igbt
2IGC109T120T6RHIGBT4 High Power Chip

IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE(sat) • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium / high power modules Applications: • medium / high power drives C G E Chip Type
Infineon
Infineon		igbt
3IGC109T120T6RLIGBT4 Low Power Chip

IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type VCE ICn D
Infineon
Infineon		igbt
4IGC109T120T6RMIGBT4 Medium Power Chip

IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium power modules Applications: • medium power drives C G E Chip Type V
Infineon
Infineon		igbt
5IGC114T170S8RMIGBT3 Power Chip

IGC114T170S8RM IGBT3 Power Chip Features:  1700V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC Die Size IGC114T170S8RM 17
Infineon
Infineon		igbt
6IGC11T120T6LIGBT4 Low Power Chip

IGC11T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type IGC11T120T6L
Infineon
Infineon		igbt
7IGC136T170S8RH2IGBT3 Power Chip

IGC136T170S8RH2 IGBT3 Power Chip Features:  1700V Trench & Field stop technology  low switching losses and saturation losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  power module
Infineon
Infineon		igbt



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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