| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | HYM536410A | 4M x 36-Bit CMOS DRAM Module w w a D . w S a t e e h U 4 t m o .c w w w a .D S ta e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c |
 Hyundai |
|
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Recommended search results related to HYM536410A |
| Part No | Description ( Function) | Manufacturers | |
| HYM536410 | 4M x 36-Bit CMOS DRAM Module w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c |
Hyundai |
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| HYM536410B | 4M x 36-Bit CMOS DRAM Module w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c |
Hyundai |
|
| KMM5364103CK | (KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG 4Byte 4Mx36 SIMM (4Mx4 & 16M Quad CAS base) Revision 0.1 Nov. 1997 DRAM MODULE Revision History Version 0.1 (Nov. 1997) • Changed the mode of parity check component from EDO to FP, refer to KMM5364003CK/CKG KMM5364103CK/CKG PA |
 Samsung Semiconductor |
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| KMM5364105CK | (KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas DRAM MODULE KMM5364005CK/CKG KMM5364105CK/CKG KMM5364005CK/CKG & KMM5364105CK/CKG Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53640(1)05CK is a 4Mx36bits Dynamic RAM high density memory module |
Samsung Semiconductor |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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