Datasheet HYB39S64160AT Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HYB39S64160AT	(HYB39S64400/800/160AT) 64 MBit Synchronous DRAM HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: -8 fCKmax. tCK3 tAC3 tCK2 tAC2 125 8 6 10 6 -8B 100 10 6 12 7 -10 100 10 7 15 8 Units MHz ns ns ns ns • • • • • • • • • • • • Multiple Burst Read with Single Write Operation Au	Siemens Semiconductor

HYB39S6416 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HYB39S64160BT	64-MBit Synchronous DRAM HYB 39S64400/800/160BT(L) 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Multiple Burst Read with Single Write Operation Units MHz ns ns ns ns • Automatic and Controlled Precharge Command • Data Mask for Read/Write Control (x4	Infineon Technologies
HYB39S64160AT	(HYB39S64400/800/160AT) 64 MBit Synchronous DRAM HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: -8 fCKmax. tCK3 tAC3 tCK2 tAC2 125 8 6 10 6 -8B 100 10 6 12 7 -10 100 10 7 15 8 Units MHz ns ns ns ns • • • • • • • • • • • • Multiple Burst Read with Singl	Siemens Semiconductor
HYB39S64160BTL	64-MBit Synchronous DRAM HYB 39S64400/800/160BT(L) 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Multiple Burst Read with Single Write Operation Units MHz ns ns ns ns • Automatic and Controlled Precharge Command • Data Mask for Read/Write Control (x4	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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