Datasheet HYB39S256400T Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HYB39S256400T	(HYB39S256xxx) 256 MBit Synchronous DRAM 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: -8 -8B 100 10 6 12 7 -10 100 10 7 15 8 Units MHz ns ns ns ns • Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command • Data Mask for Read/Write control (× 4,	Siemens Semiconductor

HYB39S2564 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HYB39S256400DT	(HYB39S256xxxD) 256 MBit Synchronous DRAM HYB39S256400/800/160DT(L)/DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -6 fCK tCK3 tAC3 tCK2 tAC2 166 6 5 7.5 5.4 -7 143 7 5.4 7.5 5.4 -7.5 133 7.5 5.4 10 6 -8 125 8 6 10 6 Units MHz ns ns ns • • • • • • • ns • • • • Da	Infineon Technologies
HYB39S256400T	(HYB39S256xxx) 256 MBit Synchronous DRAM 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: -8 -8B 100 10 6 12 7 -10 100 10 7 15 8 Units MHz ns ns ns ns • Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command • Data Mask for Read/	Siemens Semiconductor
HYB39S256400DTL	(HYB39S256xxxD) 256 MBit Synchronous DRAM HYB39S256400/800/160DT(L)/DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -6 fCK tCK3 tAC3 tCK2 tAC2 166 6 5 7.5 5.4 -7 143 7 5.4 7.5 5.4 -7.5 133 7.5 5.4 10 6 -8 125 8 6 10 6 Units MHz ns ns ns • • • • • • • ns • • • • Da	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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