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Datasheet HYB39S256160 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | HYB39S256160 | (HYB39S256xxx) 256 MBit Synchronous DRAM 256 MBit Synchronous DRAM
HYB 39S256400/800/160T
Preliminary Information
• High Performance: -8 -8B 100 10 6 12 7 -10 100 10 7 15 8 Units MHz ns ns ns ns • Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command • Data Mask for Read/Write control (× 4, |
 Siemens Semiconductor |
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| 7 | HYB39S256160CT | (HYB39S256xxxCT) 256 MBit Synchronous DRAM HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM
256 MBit Synchronous DRAM
•
High Performance:
-7.5 fCK tCK3 tAC3 tCK2 tAC2 133 7.5 5.4 10 6 -8 125 8 6 10 6 Units MHz ns ns ns ns
• • • • • • • • • • • •
Multiple Burst Read with Single Write Operation Automatic Comman |
 Infineon Technologies |
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| 6 | HYB39S256160CTL | (HYB39S256xxxCT) 256 MBit Synchronous DRAM HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM
256 MBit Synchronous DRAM
•
High Performance:
-7.5 fCK tCK3 tAC3 tCK2 tAC2 133 7.5 5.4 10 6 -8 125 8 6 10 6 Units MHz ns ns ns ns
• • • • • • • • • • • •
Multiple Burst Read with Single Write Operation Automatic Comman |
Infineon Technologies |
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| 5 | HYB39S256160DC | (HYB39S256xxxD) 256 MBit Synchronous DRAM HYB39S256400/800/160DT(L)/DC(L) 256MBit Synchronous DRAM
256 MBit Synchronous DRAM
•
High Performance:
-6 fCK tCK3 tAC3 tCK2 tAC2 166 6 5 7.5 5.4 -7 143 7 5.4 7.5 5.4 -7.5 133 7.5 5.4 10 6 -8 125 8 6 10 6 Units MHz ns ns ns
• • • • • • • ns • • • •
Data Mask for Read / W |
Infineon Technologies |
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