Datasheet HY628400LG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HY628400LG	512K x 8bit CMOS SRAM HY628400 Series 512Kx8bit CMOS SRAM DESCRIPTION The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is	Hynix Semiconductor

HY62840 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HY628400A	512K x8 bit 5.0V Low Power CMOS slow SRAM HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No 04 05 06 History Revision History Insert Revised - Change Iccdr Value : 15uA => 20uA Marking Information Add Revised - E.T (-25~85°C), I.T (-40~85°C) Par	Hynix Semiconductor
HY628400LLG	512K x 8bit CMOS SRAM HY628400 Series 512Kx8bit CMOS SRAM DESCRIPTION The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power circui	Hynix Semiconductor
HY628400LLT2	512K x 8bit CMOS SRAM HY628400 Series 512Kx8bit CMOS SRAM DESCRIPTION The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power circui	Hynix Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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