Datasheet HY628400 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
28	HY628400	512K x 8bit CMOS SRAM HY628400 Series 512Kx8bit CMOS SRAM DESCRIPTION The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is	Hynix Semiconductor
27	HY628400A	512K x8 bit 5.0V Low Power CMOS slow SRAM HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No 04 05 06 History Revision History Insert Revised - Change Iccdr Value : 15uA => 20uA Marking Information Add Revised - E.T (-25~85°C), I.T (-40~85°C) Part Insert - AC Test C	Hynix Semiconductor
26	HY628400A-LLT2-55	512K x8 bit 5.0V Low Power CMOS slow SRAM HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No 04 05 06 History Revision History Insert Revised - Change Iccdr Value : 15uA => 20uA Marking Information Add Revised - E.T (-25~85°C), I.T (-40~85°C) Part Insert - AC Test C	Hynix Semiconductor
25	HY628400ALG	512K x8 bit 5.0V Low Power CMOS slow SRAM HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No 04 05 06 History Revision History Insert Revised - Change Iccdr Value : 15uA => 20uA Marking Information Add Revised - E.T (-25~85°C), I.T (-40~85°C) Part Insert - AC Test C	Hynix Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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