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Datasheet HY5V66GF Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 HY5V66GF   4 Banks X 1M X 16Bit Synchronous DRAM

HY5V66GF 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY5V66GF is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY5V66GF is organized as 4banks of 1,048,576x16. HY5V
Hynix Semiconductor
Hynix Semiconductor
datasheet HY5V66GF pdf

HY5V6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
HY5V66GF

4 Banks X 1M X 16Bit Synchronous DRAM

HY5V66GF 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY5V66GF is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY5V66GF is organized as 4banks o
Hynix Semiconductor
Hynix Semiconductor
datasheet pdf - Hynix Semiconductor
HY5V66ELF6P

(HY5V66ExF6x) CMOS Synchronous DRAM

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.01 Initial Draft 1. Editorial chage 0.80Typ --> 0.45 +/-0.05 (page12, Ball Dimension) Before dimension : History Draft Date
Hynix Semiconductor
Hynix Semiconductor
datasheet pdf - Hynix Semiconductor
HY5V66ELF6

(HY5V66ExF6x) CMOS Synchronous DRAM

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.01 Initial Draft 1. Editorial chage 0.80Typ --> 0.45 +/-0.05 (page12, Ball Dimension) Before dimension : History Draft Date
Hynix Semiconductor
Hynix Semiconductor
datasheet pdf - Hynix Semiconductor


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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