HY5S5B6GLFP-S データシート PDFこの部品の機能は「256mbit (16mx16bit) Mobile Sdr Memory」です。 |
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部品番号 |
HY5S5B6GLFP-S 256Mbit (16Mx16bit) Mobile SDR Memory 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product desc Hynix Semiconductor |
文字列「 HY5S5B6 」「 5S5B6GLFP 」で始まる検索結果です。 |
部品説明 |
HY5S5B6ELF-HE 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision History Revision No. 0.1 0.2 0.3 1.0 Initial Draft Modification of IDD Current Modification of IDD3P & IDD3PS IDD3P / IDD3PS : 3mA / 2mA --> 5mA / 5mA Final revisio Hynix Semiconductor |
HY5S5B6ELF-SE 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision History Revision No. 0.1 0.2 0.3 1.0 Initial Draft Modification of IDD Current Modification of IDD3P & IDD3PS IDD3P / IDD3PS : 3mA / 2mA --> 5mA / 5mA Final revisio Hynix Semiconductor |
HY5S5B6ELFP-HE 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision History Revision No. 0.1 0.2 0.3 1.0 Initial Draft Modification of IDD Current Modification of IDD3P & IDD3PS IDD3P / IDD3PS : 3mA / 2mA --> 5mA / 5mA Final revisio Hynix Semiconductor |
HY5S5B6ELFP-SE 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision History Revision No. 0.1 0.2 0.3 1.0 Initial Draft Modification of IDD Current Modification of IDD3P & IDD3PS IDD3P / IDD3PS : 3mA / 2mA --> 5mA / 5mA Final revisio Hynix Semiconductor |
HY5S5B6GLF-6 256Mbit (16Mx16bit) Mobile SDR Memory 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any respo Hynix Semiconductor |
HY5S5B6GLF-6E 256Mbit (16Mx16bit) Mobile SDR Memory 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any respo Hynix Semiconductor |
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