Datasheet HY5N50T Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HY5N50T	500V / 5A N-Channel Enhancement Mode MOSFET HY5N50T / HY5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS(ON)=1.5W@VGS=10V, ID=2.5A Features • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger a	HY ELECTRONIC

HY5N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HY5N60	600V N-Channel MOSFET 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Excellent Gate Charge: 14nC(Typ) Extended Safe Operating Area Lower	HOOYI
HY5N50FT	500V / 5A N-Channel Enhancement Mode MOSFET HY5N50T / HY5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS(ON)=1.5W@VGS=10V, ID=2.5A Features • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapte	HY ELECTRONIC
HY5N50T	500V / 5A N-Channel Enhancement Mode MOSFET HY5N50T / HY5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS(ON)=1.5W@VGS=10V, ID=2.5A Features • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapte	HY ELECTRONIC

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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