HY57V658020BLTC-10P データシート PDFこの部品の機能は「4 Banks X 2m X 8bit Synchronous Dram」です。 |
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部品番号 |
HY57V658020BLTC-10P 4 Banks x 2M x 8Bit Synchronous DRAM HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memo Hynix Semiconductor |
文字列「 HY57V658020BLTC10 」「 57V658020BLTC 」で始まる検索結果です。 |
部品説明 |
HY57V658020BLTC-10 4 Banks x 2M x 8Bit Synchronous DRAM HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x Hynix Semiconductor |
HY57V658020BLTC-10S 4 Banks x 2M x 8Bit Synchronous DRAM HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x Hynix Semiconductor |
HY57V658020BLTC-75 4 Banks x 2M x 8Bit Synchronous DRAM HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x Hynix Semiconductor |
HY57V658020BLTC-8 4 Banks x 2M x 8Bit Synchronous DRAM HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x Hynix Semiconductor |
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