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Datasheet HY57V651620BTC-10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | HY57V651620BTC-10 | 4 Banks x 1M x 16Bit Synchronous DRAM HY57V651620B
4 Banks x 1M x 16Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16. H Y 5 7 V 6 |
 Hynix Semiconductor |
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| 2 | HY57V651620BTC-10P | 4 Banks x 1M x 16Bit Synchronous DRAM HY57V651620B
4 Banks x 1M x 16Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16. H Y 5 7 V 6 |
Hynix Semiconductor |
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| 1 | HY57V651620BTC-10S | 4 Banks x 1M x 16Bit Synchronous DRAM HY57V651620B
4 Banks x 1M x 16Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16. H Y 5 7 V 6 |
Hynix Semiconductor |
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