| No | Part number | Description ( Function ) | Manufacturers | |
| 9 | HY57V643220CT | 4 Banks x 512K x 32Bit Synchronous DRAM HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks of 524,288x32. HY57V643220C is offering fully synchronous operation referenced to a positive edge of the clock. All input |
 Hynix Semiconductor |
|
| 8 | HY57V643220CT-47 | 4 Banks x 512K x 32Bit Synchronous DRAM HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks of 524,288x32. HY57V643220C is offering fully synchronous operation referenced to a positive edge of the clock. All input |
Hynix Semiconductor |
|
| 7 | HY57V643220CT-5 | 4 Banks x 512K x 32Bit Synchronous DRAM HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks of 524,288x32. HY57V643220C is offering fully synchronous operation referenced to a positive edge of the clock. All input |
Hynix Semiconductor |
|
| 6 | HY57V643220CT-55 | 4 Banks x 512K x 32Bit Synchronous DRAM HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks of 524,288x32. HY57V643220C is offering fully synchronous operation referenced to a positive edge of the clock. All input |
Hynix Semiconductor |
|
| 5 | HY57V643220CT-6 | 4 Banks x 512K x 32Bit Synchronous DRAM HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks of 524,288x32. HY57V643220C is offering fully synchronous operation referenced to a positive edge of the clock. All input |
Hynix Semiconductor |
|
| 4 | HY57V643220CT-7 | 4 Banks x 512K x 32Bit Synchronous DRAM HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks of 524,288x32. HY57V643220C is offering fully synchronous operation referenced to a positive edge of the clock. All input |
Hynix Semiconductor |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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