HY57V561620FT-H データシート PDFこの部品の機能は「256m (16m X 16bit) Hynix Sdram Memory」です。 |
検索結果を表示する |
部品番号 |
HY57V561620FT-H 256M (16M x 16bit) Hynix SDRAM Memory 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is Hynix Semiconductor |
文字列「 HY57V561620 」「 57V561620FT 」で始まる検索結果です。 |
部品説明 |
HY57V561620 4Banks x 4M x 16Bit Synchronous DRAM HY57V561620(L)T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. Hynix Semiconductor |
HY57V561620CLT 4 Banks x 4M x 16Bit Synchronous DRAM HY57V561620C(L)T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C Hynix Semiconductor |
HY57V561620CT 4 Banks x 4M x 16Bit Synchronous DRAM HY57V561620C(L)T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C Hynix Semiconductor |
HY57V561620CTP 4 Banks x 4M x 16Bit Synchronous DRAM HY57V561620C(L)T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C Hynix Semiconductor |
HY57V561620FLT-5 256M (16M x 16bit) Hynix SDRAM Memory 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for Hynix Semiconductor |
HY57V561620FLT-6 256M (16M x 16bit) Hynix SDRAM Memory 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for Hynix Semiconductor |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |