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Datasheet HY57V161610ET-7I Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | HY57V161610ET-7I | 2 Banks x 512K x 16 Bit Synchronous DRAM HY57V161610ET-I
2 Banks x 512K x 16 Bit Synchronous DRAM
DESCRIPTION
THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16 |
Hynix Semiconductor |
HY57V161610ET Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
HY57V161610ETP-I | 2 Banks x 512K x 16 Bit Synchronous DRAM |
Hynix Semiconductor |
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HY57V161610ET-5I | 2 Banks x 512K x 16 Bit Synchronous DRAM |
Hynix Semiconductor |
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HY57V161610ET-15I | 2 Banks x 512K x 16 Bit Synchronous DRAM |
Hynix Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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