Datasheet HY57V161610D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
6	HY57V161610D	2 Banks x 512K x 16 Bit Synchronous DRAM HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2b	Hynix Semiconductor
5	HY57V161610D-I	2 Banks x 512K x 16 Bit Synchronous DRAM HY57V161610D-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16.	Hynix Semiconductor
4	HY57V161610DTC-10I	2 Banks x 512K x 16 Bit Synchronous DRAM HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2b	Hynix Semiconductor
3	HY57V161610DTC-55I	2 Banks x 512K x 16 Bit Synchronous DRAM HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2b	Hynix Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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