Datasheet HY57V121620LT Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HY57V121620LT	Synchronous DRAM HY57V121620(L)T 4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16. HY57V	Hynix Semiconductor

HY57V12162 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HY57V121620T	Synchronous DRAM HY57V121620(L)T 4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of	Hynix Semiconductor
HY57V121620LT	Synchronous DRAM HY57V121620(L)T 4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of	Hynix Semiconductor

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SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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