HY3506P データシート PDFこの部品の機能は「N-channel Enhancement Mode Mosfet」です。 |
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部品番号 |
HY3506P N-Channel Enhancement Mode MOSFET HY3506P/W N-Channel Enhancement Mode MOSFET Features • • • • 60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested Reliable and Rugged Lead Free and Green Devic HOOYI |
文字列「 HY3506 」「 3506P 」で始まる検索結果です。 |
部品説明 |
HY3506W N-Channel Enhancement Mode MOSFET HY3506P/W N-Channel Enhancement Mode MOSFET Features • • • • 60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D G S D S TO-220 D TO-247 Applications � HOOYI |
1N3506 Diode Zener Single 3.3V 5% 400mW 2-Pin DO-35 New Jersey Semiconductor |
2C3506 Chip Type 2C3506 Geometry 1506 Polarity NPN Data Sheet No. 2C3506 Chip Type 2C3506 Geometry 1506 Polarity NPN Generic Packaged Parts: 2N3506, 2N3507 Chip type 2C3506 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high current, high spee Semicoa |
2N3506 NPN SILICON TRANSISTOR DATA SHEET 2N3506 2N3507 NPN SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3506, 2N3507 types are Silicon NPN Epitaxial Planar Transistors designed for general purpose switching applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBO Central Semiconductor |
2N3506 Silicon NPN Transistor Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3506J) • JANTX level (2N3506JX) • JANTXV level (2N3506JV) • JANS level (2N3506JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD Semicoa Semiconductor |
2N3506 SWITCHING TRANSISTOR Solid State |
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