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Datasheet HY3208M Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 HY3208M   N-Channel Enhancement Mode MOSFET

HY3208P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2
 HOOYI
HOOYI		 datasheet HY3208M pdf

HY32 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
HY3208P

N-Channel Enhancement Mode MOSFET

HY3208P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220
 HOOYI
HOOYI		 datasheet pdf - HOOYI
HY3210B

N-Channel Enhancement Mode MOSFET

HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G
HOOYI
HOOYI		 datasheet pdf - HOOYI
HY3208B

N-Channel Enhancement Mode MOSFET

HY3208P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220
 HOOYI
HOOYI		 datasheet pdf - HOOYI


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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