| No | Part number | Description ( Function ) | Manufacturers | |
| 17 | HY29LV320B | 32 Mbit (2M x 16) Low Voltage Flash Memory HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions for full voltage range operation Ultra-low Power Consumption (Typical/ Maximum Values) – Automatic sleep/standb |
 Hynix Semiconductor |
|
| 16 | HY29LV320BF-12 | 32 Mbit (2M x 16) Low Voltage Flash Memory HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions for full voltage range operation Ultra-low Power Consumption (Typical/ Maximum Values) – Automatic sleep/standb |
Hynix Semiconductor |
|
| 15 | HY29LV320BF-12I | 32 Mbit (2M x 16) Low Voltage Flash Memory HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions for full voltage range operation Ultra-low Power Consumption (Typical/ Maximum Values) – Automatic sleep/standb |
Hynix Semiconductor |
|
| 14 | HY29LV320BF-70 | 32 Mbit (2M x 16) Low Voltage Flash Memory HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions for full voltage range operation Ultra-low Power Consumption (Typical/ Maximum Values) – Automatic sleep/standb |
Hynix Semiconductor |
|
| 13 | HY29LV320BF-70I | 32 Mbit (2M x 16) Low Voltage Flash Memory HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions for full voltage range operation Ultra-low Power Consumption (Typical/ Maximum Values) – Automatic sleep/standb |
Hynix Semiconductor |
|
| 12 | HY29LV320BF-80 | 32 Mbit (2M x 16) Low Voltage Flash Memory HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions for full voltage range operation Ultra-low Power Consumption (Typical/ Maximum Values) – Automatic sleep/standb |
Hynix Semiconductor |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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