HY29LV160BT-90 データシート PDFこの部品の機能は「16 Mbit (2m X 8/1m X 16) Low Voltage Flash Memory」です。 |
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部品番号 |
HY29LV160BT-90 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory HY29LV160 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered app Hynix Semiconductor |
文字列「 HY29LV160BT90 」「 29LV160BT 」で始まる検索結果です。 |
部品説明 |
29LV160BT MX29LV160BT R MX29LV160BT/BB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program operat Macronix International |
A29160A Boot Sector Flash Memory A29160A Series 2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. 0.0 1.0 1.1 1.2 History Initial issue Update ICC3, ICC4, Absolute Maximum Ratin AMIC Technology |
A29160B Boot Sector Flash Memory A29160B Series Preliminary 2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History 0.0 Initial issue Issue Date June 16, 2016 Remark Prelimi AMIC |
AN29160AA Transceiver Total Pages Code No.: 60 Page 1 Product Standards Part No. Package Code No. AN29160AA HSOP056-P-0300A Analogue LSI Business Unit Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established by Applied by Checked by Prepared by T.Higuchi M.Hiramatsu T.Shimazu Matsushita |
HY29LV160BT-12 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory HY29LV160 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions Ultra- Hynix Semiconductor |
HY29LV160BT-12I 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory HY29LV160 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions Ultra- Hynix Semiconductor |
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