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Datasheet HY1606 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | HY1606AP | N-Channel Enhancement Mode MOSFET HY1606AP
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
G
D
S
D
Applications
G
•
Power Management for Inverter Systems.
S
N-C |
 HOOYI |
 |
| 2 | HY1606B | N-Channel Enhancement Mode MOSFET HY1606P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/66A
RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
• Switching applicat |
HOOYI |
|
| 1 | HY1606P | N-Channel Enhancement Mode MOSFET HY1606P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/66A
RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
• Switching applicat |
HOOYI |
|
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