Datasheet HY1506I Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HY1506I	(HY1506U / HY1506I) N-Channel Enhancement Mode MOSFET HY1506P/U/I N-Channel Enhancement Mode MOSFET Features • • • • 60V/55A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D Pin Description S D S G S D G TO-220 I-PAK(TO-251) D TO-262 Applications • Pow	HOOYI

HY15 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HY1506I	(HY1506U / HY1506I) N-Channel Enhancement Mode MOSFET HY1506P/U/I N-Channel Enhancement Mode MOSFET Features • • • • 60V/55A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D Pin Description S D S G S D G TO-220 I-PAK(TO-251) D TO-262	HOOYI
HY1506P	N-Channel Enhancement Mode MOSFET HY1506P N-Channel Enhancement Mode MOSFET Features • • • • 60V/55A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Pin Description G D S D Applications G • Power Management for Invert	HOOYI
HY1506U	(HY1506U / HY1506I) N-Channel Enhancement Mode MOSFET HY1506P/U/I N-Channel Enhancement Mode MOSFET Features • • • • 60V/55A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D Pin Description S D S G S D G TO-220 I-PAK(TO-251) D TO-262	HOOYI

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Número de pieza	Descripción	Fabricantes	PDF
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