HX121WX1-100 データシート PDFこの部品の機能は「Tft Lcd Module」です。 |
検索結果を表示する |
部品番号 |
HX121WX1-100 TFT LCD Module PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HYDIS AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE HYDIS AND MUST BE RETURNED TO BOE HYDIS UPON ITS REQUEST T BOE |
文字列「 HX121WX1100 」「 121WX1 」で始まる検索結果です。 |
部品説明 |
2N1211 Trans GP BJT NPN 60V 5A 3-Pin TO-61 New Jersey Semiconductor |
2N1211 Trans GP BJT NPN 60V 5A 3-Pin TO-61 New Jersey Semiconductor |
2SD1211 Silicon NPN epitaxial planer type(For low-frequency amplification) Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB987 5.9± 0.2 Unit: mm 4.9± 0.2 s Features q q High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. (T Panasonic Semiconductor |
2SK1211 N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1211 DESCRIPTION ·Drain Current –ID=2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta= Inchange Semiconductor |
2SK1211 (2SKxxxx) Power MOSFET w w w a d . s a t e h 4 t e . u m o c ww.datasheet.jpom Fuji Semiconductors |
A1211 10 TO 1200 MHz CASCADABLE AMPLIFIER A1211/SMA1211 10 TO 1200 MHz CASCADABLE AMPLIFIER · HIGH EFFICIENCY: 16 mA at +5 Vdc · LOW NOISE FIGURE: 2.8 dB at 5 Vdc (TYP.) · LOW CURRENT DRAIN: 15.5 mA at 5 Vdc · MEDIUM OUTPUT POWER: +11 dBm at 8 Vdc (TYP.) · MEDIUM THIRD I.P.: +25 dBm at 8 Vdc Specifications (Rev. Dat Tyco Electronics |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |