|
|
Datasheet HWL30YRA Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | HWL30YRA | L-Band GaAs Power FET Features
• Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation
Description
The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.
HWL30YRA
L-Band GaAs Po |
Hexawave |
HWL30 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
HWL30YRA | L-Band GaAs Power FET |
Hexawave |
|
HWL30NPA | L-Band GaAs Power FET |
ETC |
|
HWL30NC | L-Band Power FET Non-Via Hole Chip |
Aimtron Technology |
Esta página es del resultado de búsqueda del HWL30YRA. Si pulsa el resultado de búsqueda de HWL30YRA se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |