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Datasheet HWL30NC Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HWL30NC | L-Band Power FET Non-Via Hole Chip
L-Band Power FET Non-Via Hole Chip
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|  Aimtron Technology | data |
HWL Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HWL23NPB | L-Band GaAS Power FET Features
• Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless
Applications • High Efficiency • 3V to 6V Operation
Description
The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz,  Hexawave data | | |
| 2 | HWL26NPB | L-Band GaAs Power FET Features
• Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless
Applications • High Efficiency • 3V to 6V Operation
Description The HWL26NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, Hexawave data | | |
| 3 | HWL26YC | L-Band Power FET Via Hole Chip
L-Band Power FET Via Hole Chip
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 ETC data | | |
| 4 | HWL27YRA | L-Band GaAs Power FET Features
• Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 17 dB Gain • 5V to 10V Operation
Description
The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.
Absolute Maximum Ra Hexawave data | | |
| 5 | HWL30NC | L-Band Power FET Non-Via Hole Chip
L-Band Power FET Non-Via Hole Chip
• • • •
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Aimtron Technology data | | |
| 6 | HWL30NPA | L-Band GaAs Power FET
L-Band GaAs Power FET
°
ETC data | | |
| 7 | HWL30YRA | L-Band GaAs Power FET Features
• Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation
Description
The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.
HWL30YRA
L-Band GaAs Po Hexawave data | |
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