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Datasheet HVV1214-025 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | HVV1214-025 | Power Transistor HHVVVV11221144--002255
The innovatHivVeVS1em21ic4o-n0HL1d22-u5VB0cHL1Pt0aVL1HL12L1-oR-n2V2--B102rV-1BBd00OB2V0a0C40a0aV1-nRD0ao01-n-n1d41-nm01a12Udd41-2d44d1R004MpC1RR0a04R0a20aT40ra0a-Hd50na0M-ddOPa0MyMdz7Maar,!H2Vua5rrHH25lrPHEzsP0Pz,zuPRez0,,uu2dl,Vus!22l0l2lessPI00s0se0Eede00oµdPd0Wd!P!ws!uPPs |
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| 2 | HVV1214-025 | RF transistor >LL'('*#&(+
25 Watts, 50V, 1200-1400MHz
200!s, 10% Duty
DESCRIPTION
The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications operating over the frequency range of 1200 MHz and 1400 MHz.
FEATURES
High Power Gain Excelle |
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| 1 | HVV1214-025S | RF Transistor HVV1214-025
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty
The innovative Semiconductor Company!
DESCRIPTION
The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequ |
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