HV214FG-G データシート PDFこの部品の機能は「High Voltage Analog Switch」です。 |
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部品番号 |
HV214FG-G High Voltage Analog Switch Supertex inc. HV214 250V Low Charge Injection, 8-Channel, High Voltage Analog Switch Features ►►HVCMOS® technology for high performance ►►Very low quiescent power dissipation (-10µA) ►� Supertex |
文字列「 HV214 」「 214FG 」で始まる検索結果です。 |
部品説明 |
HV214 High Voltage Analog Switch Supertex inc. HV214 250V Low Charge Injection, 8-Channel, High Voltage Analog Switch Features ►►HVCMOS® technology for high performance ►►Very low quiescent power dissipation (-10µA) ►►Low parasitic capacitances ►►DC to 50MHz small signal frequency response Supertex Inc |
HV214FG High Voltage Analog Switch Supertex inc. HV214 250V Low Charge Injection, 8-Channel, High Voltage Analog Switch Features ►►HVCMOS® technology for high performance ►►Very low quiescent power dissipation (-10µA) ►►Low parasitic capacitances ►►DC to 50MHz small signal frequency response Supertex Inc |
HV214PJ High Voltage Analog Switch Supertex inc. HV214 250V Low Charge Injection, 8-Channel, High Voltage Analog Switch Features ►►HVCMOS® technology for high performance ►►Very low quiescent power dissipation (-10µA) ►►Low parasitic capacitances ►►DC to 50MHz small signal frequency response Supertex Inc |
HV214PJ-G High Voltage Analog Switch Supertex inc. HV214 250V Low Charge Injection, 8-Channel, High Voltage Analog Switch Features ►►HVCMOS® technology for high performance ►►Very low quiescent power dissipation (-10µA) ►►Low parasitic capacitances ►►DC to 50MHz small signal frequency response Supertex |
HV214X High Voltage Analog Switch Supertex inc. HV214 250V Low Charge Injection, 8-Channel, High Voltage Analog Switch Features ►►HVCMOS® technology for high performance ►►Very low quiescent power dissipation (-10µA) ►►Low parasitic capacitances ►►DC to 50MHz small signal frequency response Supertex Inc |
1214GN-400LV Broad Band 1214GN-400LV 400 Watts - 50 Volts, 4.5ms, 30% Broad Band 1200 - 1400 MHz GENERAL DESCRIPTION The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms pulse widt Microsemi |
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