Datasheet HUR830S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HUR830S	High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode C(TAB) A A NC A=Anode, Dimensions TO-263(D2PAK) C Dim. A A1 b b2 c c2 D D1 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max	Sirectifier Semiconductors

HUR8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HUR830S	High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode C(TAB) A A NC A=Anode, Dimensions TO-263(D2PAK) C Dim. A A1 b b2 c c2 D D1 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8	Sirectifier Semiconductors
HUR830	High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode HUR830 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode HUR830 VRSM V 300 VRRM V 300 Inches Min. Max. 0.500 0.580 0.560 0.650	Sirectifier Semiconductors
HUR820S	High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode HUR820S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode C(TAB) A A NC A=Anode, Dimensions TO-263(D2PAK) C Dim. A A1 b b2 c c2 D D1 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8	Sirectifier Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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