HUFA75309P3 データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | HUFA75309P3 | 19A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding hi |
 Fairchild Semiconductor |
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HUFA7530 Datasheet ( データシート ) - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| HUFA75309T3ST | 3A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFET HUFA75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting |
Fairchild Semiconductor |
|
| HUFA75309D3S | 19A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistan |
Fairchild Semiconductor |
|
| HUFA75307T3ST | 2.6A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFET HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulti |
Fairchild Semiconductor |
|
| HUFA75307D3S | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistan |
Fairchild Semiconductor |
|
| HUFA75309P3 | 19A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistan |
Fairchild Semiconductor |
|
| HUFA75309D3 | 19A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistan |
Fairchild Semiconductor |
|
| HUFA75307P3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistan |
Fairchild Semiconductor |
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