HTZ110A22K データシート PDFこの部品の機能は「High Voltage Diode Rectifier Module」です。 |
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部品番号 |
HTZ110A22K High Voltage Diode Rectifier Module HTZ110A Series IF(AV) = 3.5 A VRRM = 25000 V High Voltage Diode Rectifier Module Minimum Avalanche Voltage V(BR)R 27200 24000 20800 17600 -V R R M - LARONTROL Electronic Devices Type Number HTZ110A IXYS Corporation |
HTZ110A22K High Voltage Diode Rectifier Module IXYS Corporation |
文字列「 HTZ110A22 」「 110A22K 」で始まる検索結果です。 |
部品説明 |
MAAP-011022 High Power Amplifier MAAP-011022 7 W Pulsed High Power Amplifier 2.7 - 3.0 GHz, 6 mm PQFN 28-LD Rev. V2 Features 7 W Pulsed Output Power (Saturated) 23 dB Gain +10 V Bias Operation 50 Ω Impedance, Balanced Design Lead-Free 6 mm 28-lead PQFN Package Halogen-Free “Green� MA-COM |
MJ11022 NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) MJ11022 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction T Wing Shing Computer Components |
MJ11022 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11017/D Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — hFE = 4 Motorola Semiconductors |
MJ11022 DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features http://onsemi ON |
MJ11022 POWER TRANSISTORS(15A /150-250V /175W) A A A A Mospec |
MJ11022 Trans Darlington NPN 250V 15A 3-Pin(2+Tab) TO-204 Tray New Jersey Semiconductor |
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