HTZ110A16K データシート PDFこの部品の機能は「High Voltage Diode Rectifier Module」です。 |
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部品番号 |
HTZ110A16K High Voltage Diode Rectifier Module HTZ110A Series IF(AV) = 3.5 A VRRM = 25000 V High Voltage Diode Rectifier Module Minimum Avalanche Voltage V(BR)R 27200 24000 20800 17600 -V R R M - LARONTROL Electronic Devices Type Number HTZ110A IXYS Corporation |
HTZ110A16K High Voltage Diode Rectifier Module IXYS Corporation |
文字列「 HTZ110A16 」「 110A16K 」で始まる検索結果です。 |
部品説明 |
11016 PRN110 CALIFORNIA MICRO DEVICES PRN100/110 Isolated Resistor Termination Network Features • Stable resistor network • High speed termination network • 8 or 12 terminating lines/package • Saves board space and reduces assembly cost Applications • Series California Micro Devices |
MJ11016 NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) MJ11016 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction T Wing Shing Computer Components |
MJ11016 DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON ON Semiconductort PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. MJ11015 MJ11012 NPN • High DC Current Gain — • • hFE = 1000 (Min) @ IC – 20 Adc Monolith ON Semiconductor |
MJ11016 POWER TRANSISTORS(30A/60-120V/200W) A A A Mospec Semiconductor |
MJ11016 Transistors MJ11016 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 2 Semelab Plc |
MJ11016 Silicon NPN Darlington Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ11016 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max Inchange Semiconductor |
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