Datasheet HSB83YP Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HSB83YP	Silicon Epitaxial Planar Diode for High Voltage Switching HSB83YP Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-843(Z) Rev 0 Mar 2000 Features • High reverse voltage. (VR=250V) • CMPAK- 4 package which has two devices parallel connection, is suitable for high density surface mounting. Ordering Information Type No. HSB83YP Laser Ma	Hitachi Semiconductor

HSB8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HSB83YP	Silicon Epitaxial Planar Diode for High Voltage Switching HSB83YP Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-843(Z) Rev 0 Mar 2000 Features • High reverse voltage. (VR=250V) • CMPAK- 4 package which has two devices parallel connection, is suitable for high density surface mounting. Ordering Information Type	Hitachi Semiconductor
HSB88WS	Silicon Schottky Barrier Diode HSB88WS Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-026C (Z) Rev. 3 Aug. 2000 Features • Small ∆VF and ∆C. • Good for surface mounting on printed circuit board. • Each diode can be biased. • Wideband operation. Ordering Information Type No. HSB88WS Las	Hitachi
HSB857	PNP EPITAXIAL PLANAR TRANSISTOR	Hi-Sincerity Mocroelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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