Datasheet HS1010E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HS1010E	N channel 60V MOSFET HS1010E N channel 60V MOSFET 1. Description The HS1010E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance. 2. Feature ● RDS(ON)≦9mΩ	Chengqi Semiconductor

HS10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HS108	OTP ROM Datasheet.es !"# $%# &'"( !"#$ % ()%%& ! '()*+,-./ 0123456 7 89& % ()% !"# :;<+=> ?@ABCDE 5 FG%HI5J	ETC
HS108	SUPERCAPACITOR DATASHEET HS108 SUPERCAPACITOR Rev1.1 Features     High capacitance (1800mF DC) Low ESR (26m @ 1kHz) High peak current, high pulsed power Thin form factor Typical Applications Interim power, energy storage & load leveling. Examples include:  Cache protection in	CAP
HS1010E	N channel 60V MOSFET HS1010E N channel 60V MOSFET 1. Description The HS1010E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance. 2. Featur	Chengqi Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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