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HS1-65647RH-8 PDF Datasheet

The HS1-65647RH-8 is Radiation Hardened 8k X 8 Sos Cmos StatIC Ram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 HS1-65647RH-8
Radiation Hardened 8K x 8 SOS CMOS Static RAM

HS-65647RH August 1995 Radiation Hardened 8K x 8 SOS CMOS Static RAM Functional Diagram AI ROW ROW DECODER 128 X 512 MEMORY ARRAY Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day • Latch-up Free • LET Threshold >250 MEV/mg/cm2 • Low Standby Supply Curr

Intersil Corporation
Intersil Corporation
pdf

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Recommended search results related to HS1-65647RH-8

Part No Description ( Function) Manufacturers PDF
HS1-65647RH   Radiation Hardened 8K x 8 SOS CMOS Static RAM

HS-65647RH August 1995 Radiation Hardened 8K x 8 SOS CMOS Static RAM Functional Diagram AI ROW ROW DECODER 128 X 512 MEMORY ARRAY Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x

Intersil Corporation
Intersil Corporation
datasheet pdf
HS1-65647RH-Q   Radiation Hardened 8K x 8 SOS CMOS Static RAM

HS-65647RH August 1995 Radiation Hardened 8K x 8 SOS CMOS Static RAM Functional Diagram AI ROW ROW DECODER 128 X 512 MEMORY ARRAY Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x

Intersil Corporation
Intersil Corporation
datasheet pdf

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