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Datasheet HRLU370N10K Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | HRLU370N10K | N-Channel MOSFET HRLD370N10K_HRLU370N10K
HRLD370N10K / HRLU370N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 53 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 mΩ ( | SemiHow | mosfet |
HRL Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | HRL0103C | Silicon Schottky Barrier Diode
HRL0103C
Silicon Schottky Barrier Diode for Rectifying
REJ03G0367-0200 Rev.2.00 Mar 05, 2007
Features
• Low reverse voltage drop and suitable for high efficiency reverse current. • Lineup of environmental friendly Halogen free type (HRL0103C-N) • Extremely small Flat Lead Renesas Technology diode | | |
2 | HRLA-C1ML-06-PJ | Optical Variable Attenuators Optical Variable Attenuators
HRLA Series
MU SC FC Harsh Environment
sFeatures
1. The attenuation can be set for attenuation range of 1 to 6 dB. 2. Air gap method offers efficient attenuation.
Attenuators
3. Available in Plug-Jack configurations. 4. Support FC type (JIC C 5970) optical fiber connec Hirose Electric data | | |
3 | HRLD125N06K | N-Channel MOSFET HRLD125N06K_HRLU125N06K
HRLD125N06K / HRLU125N06K
60V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10 mΩ (T SemiHow mosfet | | |
4 | HRLD150N10K | N-Channel MOSFET HRLD150N10K_HRLU150N10K
HRLD150N10K / HRLU150N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 13 Pȍ (Typ.) SemiHow mosfet | | |
5 | HRLD1B8N10K | N-Channel MOSFET HRLD1B8N10K_HRLU1B8N10K
HRLD1B8N10K / HRLU1B8N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 11.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 140 Pȍ (Typ SemiHow mosfet | | |
6 | HRLD370N10K | N-Channel MOSFET HRLD370N10K_HRLU370N10K
HRLD370N10K / HRLU370N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 53 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 mΩ ( SemiHow mosfet | | |
7 | HRLD55N03K | N-Channel MOSFET HRLD55N03K_HRLU55N03K
HRLD55N03K / HRLU55N03K
30V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 50nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 mΩ (Typ.) SemiHow mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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