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Datasheet HRF32 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | HRF32 | Silicon Schottky Barrier Diode for Rectifying HRF32
Silicon Schottky Barrier Diode for Rectifying
ADE-208-164D(Z) Rev 4 Jul. 1997 Features
• • Good for high-frequency rectify. LRP structure ensures higher reliability.
Ordering Information
Type No. HRF32 Laser Mark 32 Package Code LRP
Outline
Cathode mark Mark
1
32
2 1. Cathode 2. Ano |
 Hitachi Semiconductor |
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| 4 | HRF3205 | 100A/ 55V/ 0.008 Ohm/ N-Channel/ Power MOSFETs HRF3205, HRF3205S
Data Sheet December 2001
100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval |
 Fairchild Semiconductor |
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| 3 | HRF3205 | 100A/ 55V/ 0.008 Ohm/ N-Channel/ Power MOSFETs HRF3205, HRF3205S
Data Sheet June 1999 File Number
4447.4
100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in t |
 Intersil Corporation |
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| 2 | HRF3205S | 100A/ 55V/ 0.008 Ohm/ N-Channel/ Power MOSFETs HRF3205, HRF3205S
Data Sheet December 2001
100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval |
Fairchild Semiconductor |
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