HPS1611 データシート PDFこの部品の機能は「Diode (spec Sheet)」です。 |
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部品番号 |
HPS1611 Diode (spec sheet) American Microsemiconductor |
文字列「 HPS1611 」「 1611 」で始まる検索結果です。 |
部品説明 |
16114FP HA16114FP www.datasheet.jp To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporat Renesas |
2SA1611 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR NEC |
2SA1611 Transistor Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 2SA1611 FEATURES Power dissipation PCM TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF : 0.15 W (Tamb=25℃) 2. 30¡ À0. 05 Collector current : -0.1 A ICM Collec TRANSYS |
2SA1611 Transistor SMD Type PNP Silicon Epitaxia 2SA1611 Transistors IC Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissip Kexin |
2SA1611 PNP Silicon Plastic Encapsulated Transistor 2SA1611 Elektronische Bauelemente -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC Current Gain High Voltage Complementary to 2SC4177 A 3 SOT-323 L 3 Top View C B 1 SeCoS |
2SA1611 Transistor 2SA1 61 1 TRANSISTOR(PNP) FEATURES High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Co Jin Yu Semiconductor |
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