HOA2498-002 データシート PDFこの部品の機能は「Hoa Series Reflective Sensor」です。 |
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部品番号 |
HOA2498-002 HOA Series Reflective Sensor HOA2498-002 HOA Series Reflective Sensor, Transistor Output, Plastic Package Features q Choice of phototransistor or photodarlington output q Focused for maximum response q Wide operating temperature Honeywell |
文字列「 HOA2498002 」「 2498 」で始まる検索結果です。 |
部品説明 |
1N2498 Zener Diode Solid State |
2SC2498 Silicon NPN epitaxial planer Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2498 VHF~UHF Band Low Noise Amplifier Application Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipatio Toshiba Semiconductor |
2SD2498 NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY/ COLOR TV. HIGH SPEED SWITCHING APPLICATIONS) www.datasheet.jp 2SD2498 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage Low Saturation Voltage High Speed : VCBO = 1500 V : VCE (sat) = 5 V (Ma Toshiba Semiconductor |
2SD2498 Silicon Diffused Power Transistor(GENERAL DESCRIPTION) 2SD2498 GENERAL DESCRIPTION Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic package,primarily for use in switching power circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PM CONDITIONS VBE = 0V TYP VCESM Wing Shing Computer Components |
2SD2498 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2498 DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display, color TV SavantIC |
2SK2498 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2498 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION 2SK2498 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.0±0.3 4.5±0.2 2.7±0.2 FEATUR NEC |
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