Datasheet HN4B102J Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HN4B102J	Silicon PNP / NPN Epitaxial Type Transistor HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Switching Applications • Small footprint due to a small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A) • Low colle	Toshiba

HN4B1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HN4B102J	Silicon PNP / NPN Epitaxial Type Transistor HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Switching Applications • Small footprint due to a small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A) : NPN hFE = 200 to 500 (IC =	Toshiba

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Número de pieza	Descripción	Fabricantes	PDF
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