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HMT31GR7CFR8A データシート PDF

この部品の機能は「Ddr3l Sdram Registered Dimm」です。


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部品番号
HMT31GR7CFR8A

DDR3L SDRAM Registered DIMM


240pin DDR3L SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 2Gb C-die HMT325R7CFR8A HMT351R7CFR8A HMT351R7CFR4A HMT31GR7CFR8A HMT31GR7CFR4A *Hynix Semiconductor reserves the right to cha


Hynix Semiconductor
Hynix Semiconductor

データシート pdf



文字列「 HMT31GR7CFR8 」「 31GR7CFR8A 」で始まる検索結果です。

部品説明

HMT31GR7CFR8C

DDR3 SDRAM Registered DIMM

240pin DDR3 SDRAM Registered DIMM DDR3 SDRAM Registered DIMM Based on 2Gb C-die HMT325R7CFR8C HMT351R7CFR8C HMT351R7CFR4C HMT31GR7CFR8C HMT31GR7CFR4C HMT42GR7CMR4C *SK hynix reserves the right to change products or specifications without notice. Rev. 1.0 /Jul. 2012 1 Revisio

Hynix Semiconductor
Hynix Semiconductor

 データシート pdf


2N3178

PNP Transistor

5 AMP PNP (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) SFT5001 5 80 30 SFT5553A/E Series 5 80 60 SFT5553AG 5 80 25 SFT5553AJ 5 80 25 2N3178 5 100 10 2N3186 5 100 10 2N3190 5 100 10 2N3198 5 100 10 2N5286 5 10

SSDI
SSDI

 データシート pdf


2SC3178

2SC3178

ETC
ETC

 データシート pdf


2SC3178

(2SC3178 / 2SC3059 - 2SC3061) Silicon High Speed Power Transistor

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manu

Fujitsu Media Devices
Fujitsu Media Devices

 データシート pdf


ADP3178

(ADP3158 / ADP3178) 4-Bit Programmable Synchronous Buck Controllers

a FEATURES Optimally Compensated Active Voltage Positioning with Gain and Offset Adjustment (ADOPT™) for Superior Load Transient Response Complies with VRM Specifications with Lowest System Cost 4-Bit Digitally Programmable 1.3 V to 2.05 V Output N-Channel

Analog Devices
Analog Devices

 データシート pdf


CEM3178

Dual N-Channel Enhancement Mode Field Effect Transistor

CEM3178 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface

CET
CET

 データシート pdf

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