HMC641ALC4 データシート PDFこの部品の機能は「Gaas MmIC Sp4t Non-reflective Switch」です。 |
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部品番号 |
HMC641ALC4 GaAs MMIC SP4T NON-REFLECTIVE SWITCH SWITCHES - SP4T - SMT v00.0713 Typical Applications The HMC641ALC4 is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military & Space Hybrids • Test Instrumentation • SATCOM Analog Devices |
文字列「 HMC641ALC4 」「 641ALC4 」で始まる検索結果です。 |
部品説明 |
2N6414 Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor |
AO6414 N-Channel Enhancement Mode Field Effect Transistor AO6414 N-Channel Enhancement Mode Field Effect Transistor General Description The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load Alpha & Omega Semiconductors |
AON6414 N-Channel Enhancement Mode Field Effect Transistor AON6414 30V N-Channel MOSFET General Description Product Summary The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V Alpha & Omega Semiconductors |
AON6414A N-Channel MOSFET AON6414A 30V N-Channel MOSFET General Description The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(O Alpha & Omega Semiconductors |
AON6414A N-Channel MOSFET AON6414A 30V N-Channel MOSFET General Description The AON6414A uses advanced trench technology to provide excellent RDS(ON) , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Features VDS ID (at VGS=10V) RDS(ON) (at Freescale |
B66414 Ferrites and accessories Ferrites and accessories EFD 15/8/5 Core and accessories Series/Type: Date: B66413, B66414 September 2006/June 2007 Data Sheet EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EP EPCOS |
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