| No | Part number | Description ( Function ) | Manufacturers | |
| 2 | HMC457QS16G | InGaP HBT 1 WATT POWER AMPLIFIER HMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 11 Typical Applications The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: • CDMA & W-CDMA • GSM, GPRS & Edge • Base Stations & Repeaters Features Output IP3: +46 dBm Gain: 27 dB @ 1900 MHz 48% PAE @ +32 dBm Pout +25 dBm W-CDMA Channel Powe |
 Hittite Microwave Corporation |
|
| 1 | HMC457QS16GE | InGaP HBT 1 WATT POWER AMPLIFIER HMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 11 Typical Applications The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: • CDMA & W-CDMA • GSM, GPRS & Edge • Base Stations & Repeaters Features Output IP3: +46 dBm Gain: 27 dB @ 1900 MHz 48% PAE @ +32 dBm Pout +25 dBm W-CDMA Channel Powe |
 Analog Devices |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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