HMC364S8G データシート PDFこの部品の機能は「Smt Gaas Hbt MmIC Divide-by-2/ Dc - 12.5 Ghz」です。 |
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部品番号 |
HMC364S8G SMT GaAs HBT MMIC DIVIDE-BY-2/ DC - 12.5 GHz MICROWAVE CORPORATION v02.1202 HMC364S8G SMT GaAs HBT MMIC DIVIDE-BY-2, DC - 12.5 GHz Features Ultra Low SSB Phase Noise: -145 dBc/Hz Wide Bandwidth Output Power: 4 dBm Single DC Supply: +5V S8G SMT Hittite Microwave Corporation |
文字列「 HMC364S8 」「 364S8G 」で始まる検索結果です。 |
部品説明 |
2N3648 SWITCHING TRANSISTOR MAXIMUM RATINGS Rating CoHector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature R Motorola Semiconductors |
2N3648 Trans GP BJT NPN 30V 0.5A New Jersey Semiconductor |
2SC3648 PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:ENN1788A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1418/2SC3648 High-Voltage Switching, Predriver Applications Applications · Color TV audio output, inverter. Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capaci Sanyo Semicon Device |
2SC3648 HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS UNISONIC TECHNOLOGIES CO., 2SC3648 NPN EPITAXIAL SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS FEATURES * High breakdown voltage and large current capacity * Fast switching speed * Over Current Protection Function 1 SOT-89 *Pb-free plating product number: Unisonic Technologies |
2SC3648 Transistor SMD Type High-Voltage Switching Applications 2SC3648 Transistors Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter Kexin |
2SC3648 Bipolar Transistor Ordering number : EN1788C 2SA1418/2SC3648 Bipolar Transistor (–)160V, (–)0.7A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons • Color TV audio output, inverter Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current ON Semiconductor |
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