HMC213BMS8GE データシート PDFこの部品の機能は「Gaas MmIC Smt Double-balanced Mixer」です。 |
検索結果を表示する |
部品番号 |
HMC213BMS8GE GaAs MMIC SMT Double-Balanced Mixer HMC213BMS8GE v01.0216 GaAs MMIC SMT DoubleBalanced Mixer, 1.5 - 4.5 GHz Typical Applications The HMC213BMS8GE is ideal for: • Base Stations 1 • PCMCIA Transceivers • Wireless Local Loop Feat Analog Devices |
文字列「 HMC213BMS8 」「 213BMS8GE 」で始まる検索結果です。 |
部品説明 |
1N2138A 35/40/and 60 Amp Power Silicon Rectifier Diodes International Rectifier |
1N2138A (1N2133A - 1N2138AR) Silicon Standard Recovery Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ America Semiconductor |
1N2138AR (1N2133A - 1N2138AR) Silicon Standard Recovery Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ America Semiconductor |
2SD2138 Silicon NPN triple diffusion planar type Darlington(For power amplification) Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1418 and 2SB1418A 5.0±0.1 Unit: mm 13.0±0.2 4.2±0.2 s Features q q 10.0±0.2 1.0 2.5±0.2 High forward current transfer ratio hFE which h Panasonic Semiconductor |
2SD2138 Silicon PNP epitaxial planar type Darlington(For power amplification) Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1418 and 2SB1418A 5.0±0.1 Unit: mm 13.0±0.2 4.2±0.2 s Features q q 10.0±0.2 1.0 2.5±0.2 High forward current transfer ratio hFE which h Panasonic Semiconductor |
2SD2138A Silicon PNP epitaxial planar type Darlington(For power amplification) Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2138 and 2SD2138A 13.0±0.2 4.2±0.2 Unit: mm 5.0±0.1 10.0±0.2 1.0 s Features q q q High foward current transfer ratio hFE High-speed switching Allow Panasonic Semiconductor |
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