HMC1132 データシート PDFこの部品の機能は「Power Amplifier」です。 |
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部品番号 |
HMC1132 Power Amplifier Data Sheet 1 Watt, GaAs pHEMT MMIC Power Amplifier, 27 GHz to 32 GHz HMC1132 FEATURES Saturated output power (PSAT): 30.5 dBm at 22% power added efficiency (PAE) High output IP3: 35 dBm High gain: 2 Analog Devices |
文字列「 HMC1132 」「 1132 」で始まる検索結果です。 |
部品説明 |
2DB1132P 32V PNP POWER SWITCHING TRANSISTOR 2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features BVCEO > -32V IC = -1A high Continuous Collector Current Complementary NPN Type: 2DD1664 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applic Diodes |
2DB1132Q 32V PNP POWER SWITCHING TRANSISTOR 2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features BVCEO > -32V IC = -1A high Continuous Collector Current Complementary NPN Type: 2DD1664 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applic Diodes |
2DB1132R 32V PNP POWER SWITCHING TRANSISTOR 2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features BVCEO > -32V IC = -1A high Continuous Collector Current Complementary NPN Type: 2DD1664 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applic Diodes |
2N1132 LOW POWER PNP SILICON TRANSISTOR TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dis Microsemi |
2N1132 SILICON PLANAR PNP TRANSISTOR SILICON PLANAR PNP TRANSISTOR 2N1132 • High Speed Switching • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Co TT |
2N1132 SWITCHING TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (R BE « 10 Ohms) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a Ta = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 2 Motorola Semiconductors |
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